Raman spectra fromp-type GaN have been systematically studied in the hole density range of5×1016–1×1018 cm−3.Contrary to the case ofn-type samples, spectral profiles of the LO-phonon-plasmon coupled mode inp-type show no remarkable change with the hole density. Thus, precise evaluation of electrical transport parameters such as carrier density and mobility from the coupled mode profile is difficult. However, a continuum band has been observed in the low-frequency range of the spectra, becoming intense with the increase of the hole density. This band has been attributed to the inter-valence-band transition of holes, and the intensity can be used as a good measure of the hole density. ©1998 American Institute of Physics.