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Radiation damage and electron radiation induced recovery in ZnTe

 

作者: G. Lu,   F. Niu,   R. Wang,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1991）
卷期: Volume 116, issue 1-2  

页码: 81-94

 

ISSN:1042-0150

 

年代: 1991

 

DOI:10.1080/10420159108221347

 

出版商: Taylor & Francis Group

 

关键词: Radiation damage;defect annealing;transmission electron microscopy;dislocation loops;nonradiative recombination

 

数据来源: Taylor

 

摘要:

Ar ion radiation produced defects in ZnTe crystals and their annealing are investigated using transmission electron microscopy. The defects are identified to be densely distributed small dislocation loops. Under electron beam irradiation, these dislocation loops are seen to reduced in density considerably. This electron beam induced defect annealing is explained qualitatively in terms of the non-radiative recombination of excited electron on the defects.

 

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