X‐ray reciprocal space mapping of GaAs/AlAs quantum wires and quantum dots
作者:
A. A. Darhuber,
E. Koppensteiner,
G. Bauer,
P. D. Wang,
Y. P. Song,
C. M. Sotomayor Torres,
M. C. Holland,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 8
页码: 947-949
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113606
出版商: AIP
数据来源: AIP
摘要:
Periodic arrays of 150 and 175 nm‐wide GaAs–AlAs quantum wires and quantum dots were investigated, fabricated by electron beam lithography, and SiCl4/O2reactive ion etching, by means of reciprocal space mapping using triple axis x‐ray diffractometry. From the x‐ray data the lateral periodicity of wires and dots, and the etch depth are extracted. The reciprocal space maps reveal that after the fabrication process the lattice constant along the growth direction slightly increases for the wires and even more so for the dots. ©1995 American Institute of Physics.
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