The yield point of as-grown and pre-deformed semiconductors
作者:
Hans Siethoff,
期刊:
Philosophical Magazine Letters
(Taylor Available online 1992)
卷期:
Volume 66,
issue 1
页码: 1-7
ISSN:0950-0839
年代: 1992
DOI:10.1080/09500839208206006
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
The strain-rate and temperature dependence of the lower yield stress of silicon and several III-V compounds is different for as-grown and pre-deformed crystals. While the behaviour of as-grown material is rather uniform among these semiconductors, a pre-deformation of the specimens gives rise to various effects. Intrinsic and deformation-induced point defects clustering into small voids and precipitates may be responsible for such differences.
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