Scanning tunneling microscopy of molecular‐beam epitaxially grown GaAs (001) surfaces
作者:
Ichiro Tanaka,
Shunsuke Ohkouchi,
Takashi Kato,
Fukunobu Osaka,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1991)
卷期:
Volume 9,
issue 4
页码: 2277-2281
ISSN:1071-1023
年代: 1991
DOI:10.1116/1.585733
出版商: American Vacuum Society
关键词: GALLIUM ARSENIDES;SURFACE STRUCTURE;MOLECULAR BEAM EPITAXY;SCANNING TUNNELING MICROSCOPY;ULTRAHIGH VACUUM;ARSENIC;DESORPTION;SURFACE RECONSTRUCTION;IMAGES;GaAs
数据来源: AIP
摘要:
A multichamber ultrahigh vacuum (UHV) scanning tunneling microscope (STM) system which includes a molecular‐beam epitaxy (MBE) growth chamber, as well as a STM chamber, has been constructed for the investigation of processed GaAs surfaces. We observed MBE‐grown GaAs surfaces using this system. Samples were grown on GaAs (001) surfaces and cooled to certain temperatures in an As4flux before being transferred into an UHV. STM images ofc(4×4), 2×4, and mixedc(4×2) and 2×2 structures were obtained for the samples cooled to 330, 570, and 470 °C in an As4flux, respectively. The mixedc(4×2) and 2×2 structure seems to be formed by desorption of As atoms from thec(4×4) surface in an UHV. Also, a new reconstructed structure which has a 2.8‐nm periodicity along both the [110] and [11̄0]directions was observed. It seems to be a local structure which has a larger arsenic dimer density than that of thec(4×4) structure.
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