Silane dissociation products in deposition discharges
作者:
J. R. Doyle,
D. A. Doughty,
A. Gallagher,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 68,
issue 9
页码: 4375-4384
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.346186
出版商: AIP
数据来源: AIP
摘要:
Time‐dependent production of higher‐silane gases anda‐Si:H film are measured relative to decomposed silane in rf and dc, hot and cold cathode, static‐gas discharges. From the absence of higher‐silane production in very low silane partial‐pressure discharges, it is inferred that most higher silanes are produced by gas‐phase SiH2‐initiated reactions. The higher silanes are thus tracers of SiH2, while the film production traces the fraction of H, SiH, and SiH3in the initial decomposition. From the measured stable product yields, we deduce that SiH4→SiH2+2H is the dominant electron‐collisional dissociation channel.
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