Thermal stability of the Cu/Ta/PtSi structures
作者:
Chin‐An Chang,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 12
页码: 7348-7350
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.344521
出版商: AIP
数据来源: AIP
摘要:
Cu/Ta/PtSi structures are heated between 200 and 700 °C, with Ta as a barrier for improving the thermal stability of Cu/PtSi. A small amount of Cu silicides is observed after a 30‐min anneal in N2‐H2at 300−400 °C. This is accompanied by an extensive mixing among the components present, and increasing sheet resistances. By comparing with the reactions of the Cu/Ta/Si, Al/Ta/PtSi, and Al/Ta/Si structures, the mechanisms suggested earlier are supported, with the high affinity of Cu toward Si playing a major role for the low thermal stability of the Cu/PtSi structures with and without various barrier layers.
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