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Thickness‐field excited thickness‐shear resonators in (110) GaAs

 

作者: Klas Hjort,   Giorgio Schweeger,   Alfons Dehe´,   Klaus Fricke,   Hans L. Hartnagel,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 66, issue 3  

页码: 326-328

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.113533

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The authors present experimental evidence for thickness‐field excitation of thickness‐shear vibrations in GaAs as an example material for zincblende‐crystal semiconductors. The resonance frequency is shown to agree perfectly with theory. This gives an alternative to the composite resonators in miniaturized local oscillators for, e.g., monolithic microwave integrated circuit applications. ©1995 American Institute of Physics. 

 

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