Steady‐state damage profiles due to reactive ion etching and ion‐assisted etching
作者:
Robert J. Davis,
Pankah Jha,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1995)
卷期:
Volume 13,
issue 2
页码: 242-246
ISSN:1071-1023
年代: 1995
DOI:10.1116/1.588358
出版商: American Vacuum Society
关键词: ETCHING;PHYSICAL RADIATION EFFECTS;ION BEAMS;DAMAGE;CHEMICAL REACTIONS;DIFFUSION;RANGE;ION CHANNELING;STEADY−STATE CONDITIONS
数据来源: AIP
摘要:
Ion damage of materials due to reactive ion etching and ion‐assisted etching is formulated as a dynamic problem involving the etch rate, damage creation due to ions, diffusion, and ion range effects. The differential equation is solved in the steady‐state assuming an exponentially decreasing damage creation function. The ratioD/aε, whereDis the damage coefficient,athe inherent depth of ion damage, and ε the etch rate is shown to be an important parameter determining the steady‐state damage profile. Results are examined for situations in which the parameter is much less than or much greater than unity, corresponding to range‐ and diffusion‐dominated profiles, respectively. In both situations, steady‐state damage profiles will be quite sensitive to the etch rate of the surface. We suggest some experiments which may elucidate the separate contributions of ion channeling and diffusion to observed damage depth profiles.
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