Dependence of lattice parameter on elastic strain and composition in undoped Czochralski grown GaAs
作者:
Yasumasa Okada,
Yozo Tokumaru,
Yoshinori Kadota,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 15
页码: 975-977
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.96628
出版商: AIP
数据来源: AIP
摘要:
By precise measurement of the spatial variation in the lattice parameters of {001} undoped Czochralski grown gallium arsenide wafers, it was found that the lattice parameters are strongly dependent upon elastic strain and not so much on the melt composition. Although a remarkable spatial variation in the lattice parameters of ±5×10−6nm from the average value was observed in a wafer specimen, the variation was considerably reduced to ±2×10−6nm by dividing the wafer into small specimens. The lattice parameter variation was smaller than 2×10−6nm due to a change in the As composition ratio from 0.42 to 0.52 in the melt.
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