Composition‐tuned PbSxSe1−xSchottky‐barrier infrared detectors
作者:
R. B. Schoolar,
J. D. Jensen,
G. M. Black,
期刊:
Applied Physics Letters
(AIP Available online 1977)
卷期:
Volume 31,
issue 9
页码: 620-622
ISSN:0003-6951
年代: 1977
DOI:10.1063/1.89773
出版商: AIP
数据来源: AIP
摘要:
Schottky‐barrier photodiodes were prepared by depositing either lead or indium ontop‐type PbSxSe1−xepitaxial films. These photodiodes had 77 °K zero‐bias resistance‐area products of 26–21 000 &OHgr; cm2asxvaried from 0 to 1, respectively. The peak detectivities were close to the background limit and could be composition tuned between 3.7 and 6.9 &mgr;m at 77 °K. Narrowband detectors were prepared by using one film as a short‐wavelength cutoff filter and a second film, of slightly different composition, as the detector. These devices exhibit high quantum efficiencies, low half‐bandwidths, and insensitivity to variations in incident angle.
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