A single precursor photolitic chemical vapor deposition of silica film using a dielectric barier discharge xenon excimer lamp
作者:
Atsushi Yokotani,
Noritaka Takezoe,
Kou Kurosawa,
Tatsushi Igarashi,
Hiromitu Matsuno,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 10
页码: 1399-1401
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.117594
出版商: AIP
数据来源: AIP
摘要:
Silica film has been produced at room temperature by a single precursor process of photolitic chemical vapor deposition using a newly developed Xe excimer lamp. Tetraethoxyorthosilicate (TEOS) has been used as a raw material. Transparent thin film of SiO2was obtained on single crystalline Al2O3substrates and its properties were evaluated by means of the reflection Fourier transformation‐infrared spectroscopy, the scanning electron microscopy, and ultraviolet‐visible spectrometry. Consequently, it was found that the main component of the film was SiO2and very small amounts of residual organic materials were contained. It was also found that the film was very dense and the refractive indices were only 1.7% smaller than that of bulk silica glass. ©1996 American Institute of Physics.
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