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Stress‐corrosion cracking in silicon

 

作者: M. D. Thouless,   R. F. Cook,  

 

期刊: Applied Physics Letters  (AIP Available online 1990)
卷期: Volume 56, issue 20  

页码: 1962-1964

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.103035

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Stress‐corrosion cracking—the phenomonon in which the initiation and propagation of cracks is enhanced by a chemically active environment—has previously not been observed in silicon. For example, extensive experiments have shown no effect of water on the fracture properties. However, using indentation cracks in the presence of a HF etch, we have been able to show stress‐corrosion cracking in silicon for the first time. This is attributed to the initial removal of the native silica layer, and the subsequent lowering of the fracture resistance by passivation of the crack surfaces.

 

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