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Self‐aligned polycrystalline silicon thin‐film transistors by laser implantation

 

作者: P. Coxon,   M. Lloyd,   P. Migliorato,  

 

期刊: Applied Physics Letters  （AIP Available online 1986）
卷期: Volume 48, issue 26  

页码: 1785-1786

 

ISSN:0003-6951

 

年代: 1986

 

DOI:10.1063/1.96786

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Polycrystalline silicon thin‐film transistors have been fabricated using photochemical doping with phosphorus from the gas phase by ultraviolet laser. The results obtained show the technique to be a viable alternative to ion implantation for applications such as three‐dimensional very large scale integrated circuits.

 

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