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Mass spectrometric studies of plasma etching of silicon nitride

 

作者: P. E. Clarke,   D. Field,   A. J. Hydes,   D. F. Klemperer,   M. J. Seakins,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1985）
卷期: Volume 3, issue 6  

页码: 1614-1619

 

ISSN:0734-211X

 

年代: 1985

 

DOI:10.1116/1.582949

 

出版商: American Vacuum Society

 

关键词: SILICON NITRIDES;ETCHING;MASS SPECTROSCOPY;FLUORINE;CARBON FLUORIDES;SILICON FLUORIDES;NITROGEN MOLECULES;NITRIC OXIDE;CYANOGEN;ELECTRIC DISCHARGES;CHEMICAL REACTION YIELD;SURFACE REACTIONS;Si3N4

 

数据来源: AIP

 

摘要:

Basic chemical processes in a CF4/O2plasma during etching of silicon nitride have been investigated using mass spectrometry. Samples of the discharge are extracted through a quartz capillary and the resulting variations in species abundance at a nitride/oxide interface yield information on etch reaction pathways. Mechanisms of F and CF2attack and SiF4, N2, NO, and CN product formation are proposed. The experimental data are suitable for application in mass spectrometric endpoint detection.

 

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