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Physical and electrochemichromic properties of rf sputtered tungsten oxide films

 

作者: H. Kaneko,   S. Nishimoto,   K. Miyake,   N. Suedomi,  

 

期刊: Journal of Applied Physics  (AIP Available online 1986)
卷期: Volume 59, issue 7  

页码: 2526-2534

 

ISSN:0021-8979

 

年代: 1986

 

DOI:10.1063/1.337001

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The physical and electrochemical coloration characteristics of tungsten oxide films rf sputtered from a compressed powder WO3target have been investigated. Oxide films with 3600–9800 A˚ thickness were deposited on substrates maintained at 200 °C at a total pressure of 0.5–8×10−2Torr in Ar gas or an Ar‐0.5‐50% O2gas mixture. Physical properties of the oxide films depend on the oxygen concentration and total pressure of the sputtering atmosphere. The films prepared at 4×10−2Torr in a mixture of Ar‐0.5‐20% O2gas are transparent and amorphous, and their electrical resistivity ranges from 6.5×108to 2.4×1011&OHgr; cm. The films prepared at pressures between 4 and 6×10−2Torr in an Ar‐50% O2gas mixture are transparent, and have crystallites with a composition of WO3. The films prepared at 1×10−2Torr in a mixture of Ar‐0.5 and 5.0% O2gas are blue colored and transparent, respectively, and these films are crystallites with a composition of WO2.83. Electrochemichromic properties of the rf sputtered tungsten oxide films depend on the film structure, or on the sputtering conditions under which the films are prepared. The amorphous and crystalline WO3films formed at a high total pressure of 3–8×10−2Torr have good electrochemichromic properties and are colored deep blue. However, the crystalline WO2.83films formed at a low total pressure of 0.5–1.5×10−2Torr have poor electrochemichromic properties and are hardly colored. The amorphous oxide films with resistivity of 108–109&OHgr; cm and low density of ∼6.0 g/cm3, formed at a deposition rate higher than ∼100 A˚/min, have very good coloration characteristics. The optical properties and density of the oxide films are also described.

 

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