首页   按字顺浏览 期刊浏览 卷期浏览 Interface formation at PbTe(100) surfaces: Ge, Al, and In overlayers
Interface formation at PbTe(100) surfaces: Ge, Al, and In overlayers

 

作者: F. Cerrina,   R. R. Daniels,   Te‐Xiu Zhao,   V. Fano,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1983）
卷期: Volume 1, issue 3  

页码: 570-573

 

ISSN:0734-211X

 

年代: 1983

 

DOI:10.1116/1.582600

 

出版商: American Vacuum Society

 

关键词: lead tellurides;interface phenomena;inversion layers;adsorption;sorptive properties;diffusion;lead;tellurium;photoelectron spectroscopy;photoemission;synchrotron radiation

 

数据来源: AIP

 

摘要:

Adsorption processes were investigated for the first time on a IV–VI substrate, PbTe, by photoemission spectroscopy with synchrotron radiation Ge, Al, and In overlayers on cleaved PbTe(100) all create an inversion layer at the PbTe side of the interface. Substantial Pb and Te outdiffusion is observed even at room temperature, resulting in nonabrupt interfaces. The band discontinuities of the PbTe–Ge interface are much different from those theoretically predicted by the electron affinity rule.

 

点击下载:  PDF (389KB)



返 回