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Nonuniform mesh diode simulation code

 

作者: J. P. Quintenz,  

 

期刊: Journal of Applied Physics  (AIP Available online 1978)
卷期: Volume 49, issue 8  

页码: 4377-4382

 

ISSN:0021-8979

 

年代: 1978

 

DOI:10.1063/1.325480

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A new version of a diode simulation code has been written which allows for nonuniform zoning in both therandzdirections. This new flexibility enables more accurate treatment of crucial areas in the diode such as near emission surfaces and in target regions. The new code also has the ability to treat slanted surfaces such as that found in a tapered cathode diode. An interesting result of the new code is that a ’’parapotential’’ cathode pinches better than the corresponding flat cathode at the same total current.

 

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