Intrinsic degeneracy occurs in semiconductors in which (&Dgr;E/kT) is sufficiently small that the Fermi level is close to one or both band edges. Since studies of the Hall coefficientRand the conductivity &sgr; are often used to investigate such semiconductors,R, &sgr;, and their variation with temperature have been calculated for a simplified model of a degenerate intrinsic semiconductor. This model included spherical energy surfaces, a parabolic density of states, predominance of acoustic phonon scattering, and a linear variation &Dgr;E=E0+&agr;Tof the energy gap with temperature. It was found thatRand &sgr; differ significantly fromR0and &sgr;0, the values predicted by classical statistics. (R/R0) and (&sgr;/&sgr;0) are shown as functions ofTfor several values of the parameters &agr; and (mp/mn), wherempandmnare the hole and electron effective masses. It is also shown that plots of ln |R|T3/2and of ln&sgr; vs (1/T) are nonlinear in the degenerate case and do not have the constant slope, equal to (±E0/2k), respectively, predicted by classical statistics. The results and their bearing on the analysis of experimental data are discussed in terms of the degeneracy of the semiconductor.