首页   按字顺浏览 期刊浏览 卷期浏览 Recombination Kinetics for Thermally Dissociated Li&sngbnd;B Ion Pairs in Si
Recombination Kinetics for Thermally Dissociated Li&sngbnd;B Ion Pairs in Si

 

作者: E. M. Pell,   F. S. Ham,  

 

期刊: Journal of Applied Physics  (AIP Available online 1961)
卷期: Volume 32, issue 6  

页码: 1052-1063

 

ISSN:0021-8979

 

年代: 1961

 

DOI:10.1063/1.1736159

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The kinetics of a diffusion‐limited pairing reaction between oppositely charged impurity ions in a solid have been studied by observing the capture of mobile Li+ions by B−ions in Si. The kinetics were determined by measuring resistivity vs time after the method of Reiss, Fuller, and Morin [Bell System Tech J.35, 535 (1956)]; as pairing proceeds, the resistivity decreases because of the disappearance of the charged impurity scattering associated with unpaired ions. Measurements were made between 2° and 35°C. The observed kinetics are not of first order, and are best described by a model in which pairing is largely a random process with little correlation between particular Li+and B−ions. Diffusion constants of Li+calculated from the kinetics are in accord with previous ion‐drift results.

 

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