Low‐noise millimeter‐wave mixer diodes prepared by molecular beam epitaxy (MBE)
作者:
M. V. Schneider,
R. A. Linke,
A. Y. Cho,
期刊:
Applied Physics Letters
(AIP Available online 1977)
卷期:
Volume 31,
issue 3
页码: 219-221
ISSN:0003-6951
年代: 1977
DOI:10.1063/1.89613
出版商: AIP
数据来源: AIP
摘要:
Schottky barrier diodes which are specifically designed for use in cryogenically cooled millimeter‐wave mixers have been fabricated from MBE layers grown on heavily doped GaAs substrates. At 15 K the devices show a nearly exponential current‐voltage characteristic and a diode noise temperature which is determined predominantly by the tunneling transport mechanism. A diode noise temperature as low as 55 K was achieved under pumped conditions. This is the lowest diode noise temperature ever obtained in a resistive mixer. A single sideband mixer noise temperature of 315 K was measured at 102 GHz for a cryogenic mixer employing these diodes.
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