Argon ions were implanted at the backsurface of silicon wafers prior to the formation of the oxide of the metal‐oxide‐silicon capacitors. The implantation resulted in improved oxide. The improvement is speculated to be a consequence of the gettering of the metallic impurities by the dislocations caused by the ion implantation gettering which occurs during oxidation and prevents the impurities from being absorbed into the oxide of the subsequent capacitors.