Pressure dependence of the intersubband transition in strained In0.15Ga0.85As/GaAs multiple quantum wells
作者:
W. Shan,
X. M. Fang,
D. Li,
S. Jiang,
S. C. Shen,
H. Q. Hou,
W. Feng,
J. M. Zhou,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 5
页码: 475-477
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103670
出版商: AIP
数据来源: AIP
摘要:
The dependence of the intersubband transitions on pressure in strained In0.15Ga0.85As/GaAs multiple quantum wells has been studied in two samples with well widths of 8 and 15 nm, respectively, with photomodulated transmission spectroscopy by using a diamond anvil cell. The pressure coefficients of the energies for the intersubband transitions were found to depend significantly on the well widths and to be smaller than that of the band gap of constituents in bulk form. These results suggested that the critical thickness for strained In0.15Ga0.85As/GaAs layer should be smaller than 15 nm.
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