In this work, the electrical properties ofPb1−xSnxTeepitaxial layers with Sn composition covering the whole range were investigated. The samples were grown on(111)BaF2substrates in a molecular beam epitaxy system using PbTe, SnTe, and Te solid sources. As the alloy composition varies from PbTe to SnTe, the hole concentration increases exponentially from1017to1020 cm−3for Te-rich sources and from1017to1019 cm−3for stoichiometric ones. The resistivity of the samples, which depends mainly on their hole concentrations, shows an exponential dependence on the temperature with a slope which decreases asxgoes from 0 to 1. For allPb1−xSnxTesamples withxin the range of 0.35–0.7, the resistivity curve shows a very well defined minimum at low temperatures. This anomalous behavior is supposed to be related to the band crossing, where the energy gap temperature coefficient changes sign. The temperatures where the minimum in the resistivity occurs only agree with the ones predicted by the band inversion model aroundx=0.4,exhibiting a large deviation to lower temperatures asxincreases. ©1997 American Institute of Physics.