Silicon single-electron quantum-dot transistor switch operating at room temperature
作者:
Lei Zhuang,
Lingjie Guo,
Stephen Y. Chou,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 10
页码: 1205-1207
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121014
出版商: AIP
数据来源: AIP
摘要:
We fabricated a silicon single-electron quantum-dot transistor, which showed drain current oscillations at room temperature. These oscillations are attributed to electron tunneling through a single silicon quantum dot inside a narrow wire channel. Analysis of its current–voltage characteristic indicates that the energy level separation is about 110 meV and the silicon dot diameter is about 12 nm. ©1998 American Institute of Physics.
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