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Defects and photorefractive effects in GaAs

 

作者: L.J. Cheng,   J. Lagowski,   M.F. Rau,   F.C. Wang,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1989）
卷期: Volume 111-112, issue 1-2  

页码: 37-43

 

ISSN:1042-0150

 

年代: 1989

 

DOI:10.1080/10420158908212979

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Photorefractive effects in LEC-grown, semi-insulating, undoped GaAs crystals were investigated. The existence of both neutral and ionized states of the EL-2 center makes this material photorefractive. However, the presence of other defects and impurities can drastically deteriorate photorefractive properties.

 

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