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Characterization of dislocations in germanium substrates induced by mechanical stress

 

作者: S. Gan,   L. Li,   R. F. Hicks,  

 

期刊: Applied Physics Letters  (AIP Available online 1998)
卷期: Volume 73, issue 8  

页码: 1068-1070

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.122086

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Dislocations are observed in germanium crystals (9° off axis toward the [011] direction) that have undergone plastic deformation. Optical microscopy reveals that the substrates exhibit a crosshatch pattern, consisting of ridges and trenches that extend in the [011] and [011¯] directions. Further characterization of these features with scanning tunneling microscopy shows that they consist of bands of steps. These bands are created when a group of dislocations emerge onto the crystal surface from the bulk. The dislocations are determined to be type(a/2)⟨011⟩.©1998 American Institute of Physics.

 

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