Characterization of dislocations in germanium substrates induced by mechanical stress
作者:
S. Gan,
L. Li,
R. F. Hicks,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 8
页码: 1068-1070
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122086
出版商: AIP
数据来源: AIP
摘要:
Dislocations are observed in germanium crystals (9° off axis toward the [011] direction) that have undergone plastic deformation. Optical microscopy reveals that the substrates exhibit a crosshatch pattern, consisting of ridges and trenches that extend in the [011] and [011¯] directions. Further characterization of these features with scanning tunneling microscopy shows that they consist of bands of steps. These bands are created when a group of dislocations emerge onto the crystal surface from the bulk. The dislocations are determined to be type(a/2)〈011〉.©1998 American Institute of Physics.
点击下载:
PDF
(326KB)
返 回