The amorphization process of GaP by ion implantation is studied. The samples of ⟨111⟩ oriented GaP were implanted at 130 K with various doses 5 × 1013-2 × 1016cm−2of 150 keV N+ions and with the doses of 6 × 1012-1.5 × 1015cm−2of 150 keV Cd+ions. Room temperature implantations were also performed to see the influence of temperature on defect production. Rutherford backscattering and channelling techniques were used to determine damage in crystals. The damage distributions calculated from the RBS spectra have been compared with the results of Monte-Carlo simulation of the defect creation.