Effect of Oxygen Adsorption on Silicon Surface Conductivity
作者:
F. Wilhelmsen,
J. H. Leck,
期刊:
Journal of Vacuum Science and Technology
(AIP Available online 1970)
卷期:
Volume 7,
issue 1
页码: 39-42
ISSN:0022-5355
年代: 1970
DOI:10.1116/1.1315822
出版商: American Vacuum Society
数据来源: AIP
摘要:
An experimental technique is described for observing the adsorption of oxygen on the surface of a silicon crystal. It is shown that the current flowing in a reverse biasedp-njunction is closely related to the adsorption of oxygen. Observation of this current is used to indicate that sorption obeys first order reaction laws with an initial sticking coefficient of the oxygen on silicon of10−3.
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