We have observed photoluminescence ofAl1−xInxNfilms. The films were grown on GaN by atmospheric pressure metalorganic vapor phase epitaxy. GaN was grown on ac-plane sapphire substrate with a low-temperature deposited AlN buffer layer. Photoluminescence, absorption, and x-ray diffraction measurements have shown that each spectral peak shifts with alloy compositionxand thatAl1−xInxNheteroepitaxial films are not macroscopically in phase separation and are constituted in the wurzite structure. ©1998 American Institute of Physics.