Site-selective photoluminescence (PL) spectra obtained at 6 K from the 1540 nm4I13/2→4I15/2emissions characteristic of four distinctEr3+centers in Er-implanted films of GaN are compared with theEr3+PL excited by 325 nm above-gap pump light. Two of the site-selective 1540 nmEr3+PL spectra pumped by below-gap, trap-mediated excitation bands dominate theEr3+PL spectrum excited by above-gap light. A third broad band-excited spectrum and a fourth spectrum pumped by directEr3+4f-band absorption are apparently not strongly excited by above-gap light. These results indicate that trap-mediated excitation dominates above-gap pumping ofEr3+emission in GaN:Er, and suggest an explanation for the reduced thermal quenching ofEr3+emission in GaN. ©1997 American Institute of Physics.