首页   按字顺浏览 期刊浏览 卷期浏览 Alignment and registration schemes for projection electron lithography
Alignment and registration schemes for projection electron lithography

 

作者: R. C. Farrow,   S. D. Berger,   J. M. Gibson,   J. A. Liddle,   J. S. Kraus,   R. M. Camarda,   H. A. Huggins,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 6  

页码: 3582-3585

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585849

 

出版商: American Vacuum Society

 

关键词: LITHOGRAPHY;ALIGNMENT;ELECTRON BEAMS;BACKSCATTERING;TUNGSTEN;SILICON;FEASIBILITY STUDIES;MASKING;SIGNAL DETECTION

 

数据来源: AIP

 

摘要:

Techniques for doing alignment and registration in projection electron lithography are reviewed. The issues associated with extending these techniques to the case of high incident electron energy exposure are discussed. Measurements of backscatter electron emission contrast from W markers on Si wafers at 200 kV show that mark detection within the expected range of voltages is feasible.

 

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