Kinetic aspects of epitaxial silicon growth using disilane in a rapid thermal processing system
作者:
G. Pares,
J. L. Regolini,
J. Mercier,
D. Dutartre,
D. Bensahel,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 68,
issue 9
页码: 4885-4887
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.346121
出版商: AIP
数据来源: AIP
摘要:
We have measured the epitaxial growth rate of Si in the disilane/hydrogen system for different experimental conditions in a rapid thermal processing–low‐pressure chemical vapor deposition reactor. The measured activation energy is about 43 kcal/mol for temperatures below 700 °C. The growth rate dependence on disilane or hydrogen partial pressures is measured in order to verify the reliability of a proposed model for the decomposition of the disilane molecule in the torr pressure regime. The obtained crystal quality is comparable to that obtained with silane gas except for higher growth rate in the disilane system.
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