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Laser chemical vapor deposition: A technique for selective area deposition

 

作者: S.D. Allen,  

 

期刊: Journal of Applied Physics  (AIP Available online 1981)
卷期: Volume 52, issue 11  

页码: 6501-6505

 

ISSN:0021-8979

 

年代: 1981

 

DOI:10.1063/1.328600

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Laser chemical vapor deposition (LCVD) uses a focused laser beam to locally heat the substrate and drive the CVD deposition reacton. Several different deposition reactions and substrates have been examined as a function of intensity and irradiation time using a CO2laser source: Ni on SiO2, TiO2on SiO2, TiC on SiO2, and TiC on stainless steel. LCVD film thicknesses range from <100 A˚ to ≳20 &mgr;m. Deposition rates of mm/min have been observed for LCVD Ni and 20 &mgr;m/min for LCVD TiO2. The diameter of the deposited films is dependent on irradiation conditions and can be as small as one tenth of the laser beam diameter. The LCVD films exhibit excellent physical properties such as adherence, conductivity, hardness, and smoothness.

 

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