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Formation of buried SiO2layer by oxygen implanted into Si/Ge and Si/Si0.5Ge0.5substrates

 

作者: Y. S. Tang,   Jingping Zhang,   P. L. F. Hemment,   B. J. Sealy,   Hengda Liu,   J. E. Castle,   S. M. Newstead,   A. R. Powell,   T. E. Whall,   E. H. C. Parker,  

 

期刊: Journal of Applied Physics  （AIP Available online 1990）
卷期: Volume 67, issue 11  

页码: 7151-7153

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.344542

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The formation of buried SiO2layer by high‐dose oxygen implanted into Si/Ge and Si/Si0.5Ge0.5heterostructures is studied by infrared transmission and x‐ray photoelectron spectroscopy. The results show that the Ge in the implanted region has no influence on the bonding properties of oxygen, and there exists a critical annealing temperature of about 1250 °C for all the implanted oxygen to be bonded as SiO2.

 

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