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Deposition of diamond films at low pressures and their characterization by positron annihilation, Raman, scanning electron microscopy, and x‐ray photoelectron spectroscopy

 

作者: S. C. Sharma,   C. A. Dark,   R. C. Hyer,   M. Green,   T. D. Black,   A. R. Chourasia,   D. R. Chopra,   K. K. Mishra,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 56, issue 18  

页码: 1781-1783

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.103098

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have deposited diamond films with micron‐size crystals on Si⟨111⟩ using low‐pressure hot‐filament‐assisted chemical vapor deposition. These films have been characterized by positron annihilation, Raman spectroscopy, scanning electron microscopy, and x‐ray photoelectron spectroscopy. In addition to the results for the electronic structure and morphology, we also present new results for the lattice defects present in these films.

 

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