Luminescence in Indirect Bandgap AlxGa1−xAs
作者:
H. Kressel,
F. H. Nicoll,
F. Z. Hawrylo,
H. F. Lockwood,
期刊:
Journal of Applied Physics
(AIP Available online 1970)
卷期:
Volume 41,
issue 11
页码: 4692-4696
ISSN:0021-8979
年代: 1970
DOI:10.1063/1.1658517
出版商: AIP
数据来源: AIP
摘要:
A luminescence study was made of Sn‐, Te‐, or Zn‐doped AlxGa1−xAs in the Al‐rich composition range where the bandgap transition is indirect. Several luminescent bands attributed to excitons, free‐bound carrier and donor‐acceptor recombinations have been observed. The experimental data are consistent with an ``optical'' ionization energy of Sn and Te donors in the range of 59±7 meV, and 56±5 meV for Zn acceptors. These values are expected to be similar in AlAs.
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