Radiative and non‐radiative recombination in amorphous silicon
作者:
D. Engemann,
R. Fischer,
期刊:
AIP Conference Proceedings
(AIP Available online 1976)
卷期:
Volume 31,
issue 1
页码: 37-43
ISSN:0094-243X
年代: 1976
DOI:10.1063/1.30783
出版商: AIP
数据来源: AIP
摘要:
A model is presented for recombination in amorphous silicon, the essentials of which are: The fundamental electronic excitation with the lowest energy consists of a trapped electron bound to a trapped hole by Coulombic attraction. This concept is supported by the observation that an electric field in the range of 107Vm−1is able to quench photoluminescence, and by other luminescence and photoconductivity results.
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