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Low‐threshold room‐temperature cw operation of (AlGaAs)m(GaAs)nsuperlattice quantum well lasers emitting at ∼680 nm

 

作者: T. Hayakawa,   T. Suyama,   K. Takahashi,   M. Kondo,   S. Yamamoto,   T. Hijikata,  

 

期刊: Applied Physics Letters  （AIP Available online 1987）
卷期: Volume 51, issue 10  

页码: 707-709

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.98895

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Low cw threshold current of 45 mA and high differential quantum efficiency of 78% have been achieved at room temperature in an (Al0.6Ga0.4As)2(GaAs)2superlattice quantum well laser emitting at 681 nm. The quantum well structure has been optimized to minimize the threshold current density at 680 nm. The new ridge‐waveguide structure with a current‐blocking supporting region is employed to reduce the thermal resistance.

 

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