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Some second‐phase structures in gallium arsenide annealed after implantation with zinc

 

作者: R. B. Benson,   M. A. Littlejohn,   P. S. Pao,   H. K. Sarin,  

 

期刊: Applied Physics Letters  （AIP Available online 1975）
卷期: Volume 27, issue 2  

页码: 69-71

 

ISSN:0003-6951

 

年代: 1975

 

DOI:10.1063/1.88369

 

出版商: AIP

 

数据来源: AIP

 

摘要:

After GaAs was implanted with 1015/cm260‐keV Zn ions at ambient temperature, annealing with a rf‐sputtered SiO2passivating layer resulted in the formation of the second‐phase structures ZnGa2O4at 800 °C and primarily Zn3As2at 600 °C. Possible relationships between the second‐phase structures and the electrical properties of the ion‐implanted annealed regions are discussed.

 

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