Clean silicon (111) (7×7) surfaces at up to 1050°C have been reacted with nitrogen ions and neutrals produced by a low energy ion gun. The LEED patterns observed are similar to those previously reported for reaction of silicon (111) (7×7) with NH3. The nitrogenKLLpeak exhibits no shift or change in shape with nitride growth. At the same time the magnitude of the elemental siliconLVVpeak at 92 eV decreases progressively as a new peak at 84 eV increases. The position of both peaks appears to be independent of the degree of nitridation. Since the Auger spectra are free of oxygen and other impurities, these features can be attributed only to silicon, nitrogen, and their reaction products. Characteristic features of the Auger spectra are related to LEED observations and to the growth of microcrystals of Si3N4.