Two layer resist systems for hybrid e‐beam/deep‐UV lithography are described which consists of positive type RE5000P (Hitachi Chemical) or negative type CMS‐EX (Toyo Soda) and PMMA. The systems have no interfacial problems between the top layer resist and the bottom layer resist. The thin RE5000P and CMS‐EX have very high UV absorption coefficients below 250 nm and form a high contrast mask for optical pattern transfer to the thick PMMA layer. The sensitivity of these systems for e‐beam lithography is 1 μC/cm2(RE5000P/PMMA) and 2.5 μC/cm2(CMS‐EX/PMMA) which are one order of magnitude higher than the sensitivity of the AZ1350J/PMMA system. High image resolution and linewidth control with reduced proximity effects have been demonstrated.