Epitaxial growth of NiSi2on (111)Si inside 0.1–0.6 &mgr;m oxide openings prepared by electron beam lithography has been studied by field emission scanning electron microscopy, transmission electron microscopy, and thin‐film stress measurement. Striking effects of size and shape of deep submicron oxide openings on the growth of NiSi2epitaxy were observed. Epitaxial growth of NiSi2of single orientation on (111)Si was found to occur at a temperature as low as 400 °C inside contact holes of 0.2 &mgr;m or smaller in size. Contact holes were found to be more effective in inducing the epitaxial growth of NiSi2of single orientation than that of linear openings of the same size. The effects of size and shape of lateral confinement on the epitaxial growth of NiSi2on (111)Si are correlated with the stress level inside oxide openings. ©1996 American Institute of Physics.