Improvements in high‐field superconducting performance of V3Ga by a two‐stage reaction process
作者:
T. Takeuchi,
Y. Iijima,
K. Inoue,
K. Tachikawa,
期刊:
Journal of Applied Physics
(AIP Available online 1986)
卷期:
Volume 60,
issue 3
页码: 1227-1229
ISSN:0021-8979
年代: 1986
DOI:10.1063/1.337374
出版商: AIP
数据来源: AIP
摘要:
Effects of the heat treatment condition on the high‐field superconducting performances of the surface diffusion processed V3Ga have been investigated.Icat fields nearHc2depends mainly on the layer thickness andHc2of V3Ga. The two‐stage reaction process, which consists of the first reaction at the higher temperature to form a thick enough V3Ga layer and the subsequent second reaction at the lower temperature to achieve high values ofTcandHc2, has been found to improve appreciably theIcof SDP V3Ga in high magnetic fields. OverallJc(including copper stabilizer) of about 2.0×104A/cm2at 19 T has been obtained for a ∼100‐m‐long V3Ga tape.
点击下载:
PDF
(261KB)
返 回