Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors
作者:
R. Gaska,
J. W. Yang,
A. Osinsky,
A. D. Bykhovski,
M. S. Shur,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 25
页码: 3673-3675
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120477
出版商: AIP
数据来源: AIP
摘要:
We report on a high positive turn-on voltage (close to 2.5 V) of the gate-source leakage current in AlGaN/GaN high electron mobility transistors (HEMTs). The piezoeffect, the barrier, and channel doping result in the electron sheet concentration as high as1013 cm−2.A larger conduction band discontinuity and a larger electron effective mass (compared to AlGaAs/GaAs HEMTs) lead to a lower gate current and to a higher turn-on voltage. This means that AlGaN/GaN technology can be suitable for applications in digital and mixed-mode integrated circuits. ©1997 American Institute of Physics.
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