Highly (100) orientedPb(Zr0.53Ti0.47)O3(PZT) films were prepared on Si substrates with ultrathinSiO2buffer layer by pulsed laser deposition. Hysteresis measurements show that saturation polarization, remnant polarization and coercive field of the films reach26 &mgr;C/cm2,10 &mgr;C/cm2and 70 kV/cm, respectively. The thickness ofSiO2buffer layer is found to play a significant role on phase purity and orientation of PZT as well as the prevention of interdiffusion. It is also found that the grain size and the interdiffusion between PZT and Si are the key factors for the ferroelectric properties of the films, which are discussed together with the synthesis condition in detail. ©1998 American Institute of Physics.