A silicon-ingot-growing furnace using electron-bombardment heating
作者:
D.B.Gasson,
期刊:
Proceedings of the IEE - Part B: Electronic and Communication Engineering
(IET Available online 1959)
卷期:
Volume 106,
issue 17S
页码: 854-857
年代: 1959
DOI:10.1049/pi-b-2.1959.0158
出版商: IEE
数据来源: IET
摘要:
A new type of furnace for preparing single-crystal ingots of silicon by the Czochralski technique is described. The ingot can be conveniently pulled from a melt resting on the parent solid material which in turn rests on a cooled metal hearth. The charge is heated by four focused and deflected electron beams, and a feature of the gun design is a movable cathode for controlling the magnitude of the electron current.Infra-red absorption measurements on ingots prepared by this technique indicate that the bulk oxygen content is much less than in ingots prepared from crucible-held melts.
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