首页   按字顺浏览 期刊浏览 卷期浏览 Quantum size effect in δ‐doped AlGaAs heterostructures
Quantum size effect in δ‐doped AlGaAs heterostructures

 

作者: J. E. Cunningham,   W. T. Tsang,   E. F. Schubert,   G. Timp,   T. H. Chiu,   A. Chang,   E. Agyekum,   J. A. Ditzenberger,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 2  

页码: 599-602

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584407

 

出版商: American Vacuum Society

 

关键词: SIZE EFFECT;CHARGED−PARTICLE TRANSPORT;CRYSTAL DOPING;HETEROSTRUCTURES;HALL EFFECT;ALUMINIUM ARSENIDES;GALLIUM ARSENIDES;INTERFACES;MOLECULAR BEAM EPITAXY;QUANTUM HALL EFFECT;THICKNESS;INTERFACE STATES;(Al,Ga)As;GaAs

 

数据来源: AIP

 

摘要:

We report a new structure formed by δ doping the barrier of an AlGaAs heterostructure. Our structure contains a pair of electronically coupled quantum systems that develop from the quantum size effect occurring in the barrier and at the heterointerface. Compared to conventional homogeneous doping, we find enhancements in interface density resulting in δ‐doped structures for all spacer thicknesses. A mobility of 1.9×106cm2/V s is observed at a spacer layer thickness of 360 Å. Systematic dependences of interface mobility and density on spacer thickness are deduced from the quantum Hall effect and variable temperature Hall measurements.

 

点击下载:  PDF (424KB)



返 回