Ferroelectric bismuth-layerSrBi2Ta2O9(SBT)thin films were prepared onPt/Ti/SiO2/Sisubstrate by plasma-enhanced metalorganic chemical vapor deposition. The films were crystallized at temperatures between 500 and 600 °C. The dielectric constant and dissipation factor of SBT films were 320 and 0.04 at an applied frequency of 1 MHz, respectively. The remanent polarization(Pr)and the coercive field(Ec)obtained for a 200 nm thickSr0.9Bi2.3Ta2.0O9films deposited at 550 °C were15 &mgr;C/cm2and 50 kV/cm at an applied voltage of 3 V, respectively. The leakage current density was about5.0×10−8 A/cm2at 300 kV/cm. The films showed fatigue-free characteristics up to1.0×1011switching cycles under 6 V bipolar pulse. ©1997 American Institute of Physics.