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Calculations of the electric field dependent far‐infrared absorption spectra in InAs/AlGaSb quantum wells

 

作者: S. Hong,   J. P. Loehr,   J. E. Oh,   P. K. Bhattacharya,   J. Singh,  

 

期刊: Applied Physics Letters  (AIP Available online 1989)
卷期: Volume 55, issue 9  

页码: 888-890

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.101616

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Excitonic and band‐to‐band absorption spectra are calculated for vertical incident radiation for the InAs/AlGaSb multiple quantum well structures. Due to the special band lineup of this heterostructure, the absorption spectra can be tailored to respond in far infrared. The electric field dependence of the spectra shows blue shift and enhanced absorption in contrast to the situation in type I quantum wells. Applications to far infrared detectors are discussed.

 

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